lu.se: Next generation 5G being developed at Lund University
Research for the next generation 5G network is in progress. World unique measuring equipment has been constructed at Lund University in cooperation with Ericsson and Sony. The aim is to create a mobile network that is considerably faster and more...
IT-pedagogen: Här utvecklas nästa generations 5G-nät
På Institutionen för elektro- och informationsteknik på LTH har man byggt upp en världsunik mätutrustning i samarbete med både Ericsson och Sony.
IDG.se: Svenska Debricked skannar den öppna källkoden på jakt efter risker
Open source är numera utbrett ute på företagen ? men många väljer att bortse från de risker som finns, i form av sårbarheter, eventuella licensproblem och ekosystem som snabbt kan ändras. Svenska Debricked vill automatisera analysen.
SR P4: Nu kommer flera 5G-nät till Malmö
Flera telefonoperatörer lanserar 5G-nät i Malmö nu under juni. Det nya nätet innebär bland annat snabbare dataöverföring och att fler enheter kan vara uppkopplade samtidigt, säger Fredrik Tufvesson som är professor i radiosystem vid Lunds Tekniska...
Läs och lyssna på https://sverigesradio.se/
In support of current control by quantum-mechanical tunnelling
There are still obstacles to bridge before nanoelectronics can be integrated in our everyday electronics, and thereby bring better performance and reduced energy needs. One of the challenges is about the production of the transistors, MOSFETs, that...
There are still obstacles to bridge before nanoelectronics can be integrated in our everyday electronics, and thereby bring better performance and reduced energy needs. One of the challenges is about the production of the transistors, MOSFETs, that need be of a good and consequent quality. In order to make it possible to address that problem in a systematic way Markus Hellenbrand has focused his thesis work on measuring and analysing the defects, or ?traps? in the electrically active material in the vertical MOSFET stacks. The thesis is titled ?Electrical Characterisation of III-V Nanowire MOSFETs? and will be defended 12 June at 9:15. We have spoken to the author. Link to the dissertation event 12 June 2020 at 09.15 Download the thesis (PDF) Markus Hellenbrand?s research has covered a range of topics around metal-oxide-semiconductor field-effect transistors. This term describes one of the most important components of all our electrical applications like computers, smartphones, servers to host information on the internet and so on. ?The common goal of all my investigations was to find out how transistors can be improved for lower power consumption and for higher operation frequencies?, Markus comments. ?In the Nanoelectronics group, where I did my research, we use so-called III-V materials to build transistors. These materials have very good current transport properties, which allow lower supply voltages than in the current industry standard silicon. Like with many things, unfortunately, it is difficult to fabricate perfect materials, so that real manufactured transistors suffer from material defects. I measured the effects of such defects on the transistor performance, for example electrical noise or drift during operation, so that we know what will have to be improved. I also measured the high frequency performance to find out what limits the operation frequency of these transistors, and I looked into so-called Tunnel Transistors, which use quantum mechanical tunnelling to control the device current?, he continues. Left: Measurement (circles with error bars) of low-frequency noise in a III-V nanowire MOSFET with a fitted model (lines). Right: From such measurements, the number of material defects Nbt in the gate oxide can be calculated. The different lines represent different types of transistors; curved lines and straight lines in boxes represent different models.